Quantum Semiconductor's technology platform consists of atomic-layer engineered Group-IV (C, Si, Ge, Sn, Pb) superlattices combined with novel semiconductor device architectures that together overcome the limitations imposed by the physical properties of silicon that prevent it from sensing light outside of the visible range of wavelengths and from emitting light.
MORE DETAILS >Quantum Semiconductor's novel Group-IV photo-diodes demonstrate the ultimate in photon sensitivity; high gain without noise amplification.
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Quantum Semiconductor's technology platform is beneficial to all markets that use light-sensing and imaging, including Ultra-Violet, Visible, and Infra-Red.
Group-IV superlattices can achieve higher efficiency light absorption and light emission, across a wide range of wavelengths.
Monolithic integration of Group-IV superlattices (epitaxially strained to silicon) with CMOS technology adds new functionality - with minimal additional manufacturing costs.
CMOS image sensors benefit from increased sensitivity, through higher efficiency of light absorption afforded by Group-IV superlattices and through noiseless amplification of SiGeC Photo-Diodes. Group-IV superlattices also enable detection of wavelengths beyond the visible spectrum.
Quantum Semiconductor's superlattice technology allows the absorption and emission of light in the Short-Wavelength Infra-Red (SWIR) range, allowing efficient emission of light from emitters monolithically integrated with CMOS. without additional discrete or heterogeneously integrated components. This is the ideal solution for silicon photonics.
The ultimate single-photon detection sensitivity allows LiDAR systems to see further and provide increased safety at eye-safe wavelengths, in the Short-Wavelength Infra-Red (SWIR) range.
Replacing Si or SiGe alloys with Group-IV superlattices in BiCMOS HBTs Base layer, Emitter or Collector layers, enables superior electron and hole transport speed, resulting in better performance at higher frequencies of the wireless spectrum.
Some Group-IV superlattices have Topological Properties and offer unprecedented opportunities for light-matter interaction through second order optical effects and spin engineering. These superlattices can be monolithically integrated with conventional CMOS and can be key building blocks for novel quantum devices.
The shot noise fluctuations in photo-diodes can be used for generating truly random numbers. The Quantum Semiconductor proprietary noiseless gain in SiGeC photo-diodes ensures swift circuit operation, critical for mass encryption and hand-off.
Dr. Carlos Augusto, the CTO of Quantum Semiconductor, is invited to present at Semicon West, the Future of Computing session, on Tuesday, July 9, 2024. A link to the presentation “New CMOS-Compatible Metamaterials for Classical and Quantum Photonics”. https://semiconwest2024.eventscribe.net/
Dr. Carlos Augusto, the CTO of Quantum Semiconductor, is invited to present at the San Francisco Bay Area IEEE Nanotechnology Council on “New CMOS-Compatible Materials for Efficient Infrared Light-Absorption and Emission” on March 14, 2024. https://site.ieee.org/
Led by Arizona State University, the Southwest Advanced Prototyping Hub is one of eight regional innovation hubs established under the Department of Defense’s Microelectronics Commons, a national strategic initiative to accelerate the development and production of microelectronics technologies that are critical to U.S. security and defense. The SWAP Hub’s partners include top semiconductor manufacturers and defense firms, national laboratories, leading academic institutions and organizations and startup companies. https://microelectronics.asu.edu/
